Forming jfet and ldmos transistor in monolithic power integrated circuit using deep diffusion regions

ABSTRACT

A power integrated circuit includes a junction field effect transistor (JFET) device formed in a first portion of a semiconductor layer with a gate region being formed using a first body region, and a double-diffused metal-oxide-semiconductor (LDMOS) transistor formed in a second portion of the semiconductor layer with a channel being formed in a second body region. The power integrated circuit includes a first deep diffusion region formed under the first body region and in electrical contact with the first body region where the first deep diffusion region together with the firs body region establish a pinch off voltage of the JFET device; and a second deep diffusion region formed under the second body region and in electrical contact with the second body region where the second deep diffusion region forms a reduced surface field (RESURF) structure in the LDMOS transistor.

BACKGROUND OF THE INVENTION

Monolithic power integrated circuits (PICs) for high-voltageapplications may sometimes integrate thereon a junction field effecttransistor (JFET) and a lateral double-diffusedmetal-oxide-semiconductor (LDMOS) transistor. For instance, a JFETdevice may be incorporated in a power integrated circuit to use as anormally on pass device for a startup circuit. The JFET device may havea drain terminal connected to a power source terminal (e.g. 12V), a gateterminal that is grounded, and a source terminal connected to a powersupply node for a load. As the power source ramps up, the JFET conductscurrent in a channel between the drain and the source terminal toprovide power to certain circuitry of the load. When the power supplynode (source terminal) to the load reaches the desired power supplyvoltage for the load (e.g. 5V), the JFET channel is pinched off and theJFET device is turned off. JFET devices are preferred in the normally onpass device application because of their good pinch off characteristicwhich ensures that circuitry downstream to the source terminal of theJFET is protected from the high voltage of the power source.

Meanwhile, LDMOS transistors are commonly used in high-voltageapplications (20 to 500 volts) because of their high breakdown voltagecharacteristics and compatibility with CMOS technology for low voltagedevices. In general, an LDMOS transistor includes a polysilicon gate, anN+ source region formed in a P-type body region, and an N+ drain region.The N+ drain region is separated from the channel formed in the bodyregion under the polysilicon gate by an N drift region. It is well knownthat by increasing the length of the N drift region, the breakdownvoltage of the LDMOS transistor can be accordingly increased.

When a JFET device and an LDMOS transistor are fabricated on the sameintegrated circuit, it is sometimes challenging to optimize thecharacteristics of both devices while maintaining a reasonably costeffective fabrication process. FIG. 1 is a cross-sectional view of apower integrated circuit including a JFET and an LDMOS transistor formedon the same semiconductor substrate in one example. When JFET 1 andLDMOS device 2 are manufactured using the same fabrication process, thedevices have to be formed using the same diffusion regions available inthe fabrication process. In particular, the traditional method forintegrating a JFET into a LDMOS fabrication process uses the P-type body(P-body) region 4 of the LDMOS to form the gate region. However, theP-body implant is tailored for the threshold voltage in the channel andthe breakdown voltage rating of the LDMOS transistor. The same P-bodyimplant used as the gate region for the JFET device may not yield thedesired pinch-off voltage to pinch off the transistor channel. Forexample, when the P-body implant is optimized for the LDMOS transistorthreshold voltage and breakdown voltage, the JFET device may end up witha threshold voltage of 20V or more to pinch off the JFET conductionchannel which is undesirable in the case where the JFET is coupled tosupply circuitry operating at 5 volts. It is thus difficult to optimizeboth the JFET device and the LDMOS transistor in a power integratedcircuit.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention are disclosed in the followingdetailed description and the accompanying drawings.

FIG. 1 is a cross-sectional view of a power integrated circuit includinga JFET and an LDMOS transistor formed on the same semiconductorsubstrate in one example.

FIG. 2 is a cross-sectional view of a power integrated circuit includinga JFET and an LDMOS transistor formed on the same semiconductor layeraccording to embodiments of the present invention.

FIG. 3 is a cross-sectional view of an LMOS transistor in a powerintegrated circuit according to embodiments of the present invention.

FIG. 4 illustrates a non-isolated LDMOS transistor formed in the samemanner as the LDMOS transistor of FIG. 3 with the N-type buried layeromitted in some embodiments of the present invention.

DETAILED DESCRIPTION

The invention can be implemented in numerous ways, including as aprocess; an apparatus; a system; and/or a composition of matter. In thisspecification, these implementations, or any other form that theinvention may take, may be referred to as techniques. In general, theorder of the steps of disclosed processes may be altered within thescope of the invention.

A detailed description of one or more embodiments of the invention isprovided below along with accompanying figures that illustrate theprinciples of the invention. The invention is described in connectionwith such embodiments, but the invention is not limited to anyembodiment. The scope of the invention is limited only by the claims andthe invention encompasses numerous alternatives, modifications andequivalents. Numerous specific details are set forth in the followingdescription in order to provide a thorough understanding of theinvention. These details are provided for the purpose of example and theinvention may be practiced according to the claims without some or allof these specific details. For the purpose of clarity, technicalmaterial that is known in the technical fields related to the inventionhas not been described in detail so that the invention is notunnecessarily obscured.

In embodiments of the present invention, a method to form JFET and LDMOStransistor devices in a monolithic power integrated circuit uses theLDMOS body region to form the JFET gate region and further uses a deepdiffusion regions formed under the body regions to optimize theelectrical characteristics of both the JFET and the LDMOS devices. Thedeep diffusion regions have the same dopant conductivity type as thebody region and are more heavily doped. In some embodiments, the deepdiffusion regions may be formed using a single mask implantationprocess. Accordingly, the LDMOS body region is optimized for the desiredthreshold voltage and breakdown characteristics of the LDMOS transistor.Meanwhile, the deep diffusion regions are used to optimize the pinch-offvoltage for the JFET device and also to reduce the on resistance (Rds-A)and to improve the reliability of the LDMOS transistor device. In thismanner, a single deep diffusion process is used to optimize both theJFET device and the LDMOS transistor device.

In the present description, a junction field-effect transistor (JFET)refers to a semiconductor device where electric charge flows through asemiconducting channel between a source terminal and a drain terminal.The channel has a first conductivity type while a gate region is formedin the channel having a second, opposite conductivity type. JFET can beformed as an N-channel device with the channel formed using N-typeconductivity or as a P-channel device with the channel formed usingP-type conductivity. The operation of the JFET device is based onreverse-biasing the pn junction formed between the gate region and thechannel to modulate the width of the depletion region formed at thegate-channel junction. Reverse-biasing the gate-channel pn junctioncontrols the width of the depletion region which in turns controls thewidth of the remaining channel and hence the current flow from the drainto the source. The magnitude of the current flow between the drain andthe source may also depend on the electric field or the applied voltagebetween the source and drain terminals, with the gate region biased to afixed potential. In particular, by applying a reverse bias voltage tothe gate region relative to the source region, the conducting channel ispinched by the depletion region so that the electric current is impededor switched off completely. To switch off an N-channel JFET device, anegative gate-source voltage (V_(GS)) is used. Conversely, to switch offa P-channel JFET device, a positive gate-source voltage (V_(GS)) isused.

In embodiments of the present invention, the JFET device is constructedas an N-channel switch device and is referred to as an N-type JFET orN-JFET. The N-JFET device includes a semiconducting channel havingN-type conductivity formed between a N+ region forming the sourceterminal and a N+ region forming the drain terminal. Furthermore, inembodiments of the present invention, an N-type LDMOS transistorincludes a polysilicon gate, an N+ source region formed in a P-type bodyregion, and an N+ drain region. The channel is formed in the P-type bodyregion under the polysilicon gate. The N+ drain region is separated fromthe channel by an N drift region.

FIG. 2 is a cross-sectional view of a power integrated circuit includinga JFET and an LDMOS transistor formed on the same semiconductor layeraccording to embodiments of the present invention. Referring to FIG. 2,a power integrated circuit 10 includes a JFET device 11 and an LDMOStransistor device 12 formed on a P-type semiconductor layer 20. In someembodiments, the P-type semiconductor layer 20 includes a P-typesubstrate 22 with a P-type epitaxial layer 24 formed thereon. P-typeburied layer 26 and N-type buried layer 28 may be formed on differentareas of the substrate 22. In the following description, diffusionregions having the same reference numerals refer to diffusion regions ofthe same type that are formed using the same fabrication process steps,for example, the same implant dose and implant energy and the samethermal anneal process. Separate diffusion regions of the same type aredefined by a mask and then formed on the semiconductor layer using thesame fabrication process steps. Furthermore, in the present description,the term “diffusion region” refers to doped region formed in thesemiconductor layer where the doped region is typically formed by ionimplantation of dopants of a given conductivity type and annealing ofthe implanted dopants.

In the present embodiment, the JFET device is constructed as anN-channel JFET device including a semiconducting channel having N-typeconductivity formed between a N+ region forming the source terminal anda N+ region forming the drain terminal. More specifically, in thepresent embodiment, the JFET device 11 is formed in a first portion ofthe semiconductor layer 20 on a P-type buried layer 26. The JFET device11 includes a deep N-well region 30 forming the channel region of thetransistor, N+ diffusion regions 36 formed in N-well regions 32 formingthe source and drain regions of the transistor, and a P-body region 34with a P+ diffusion region 38 formed therein to form the gate region. Adielectric layer 44 is formed on the semiconductor layer 20 and openingsin the dielectric layer 44 are made to form contacts to the N+ and P+diffusion regions. The source, drain and gate terminals of the JFET 11are thus formed. The channel of the JFET 11 is formed in the deep N-wellregion 30.

In the present embodiment, the LDMOS transistor device 12 is constructedas an N-type LDMOS transistor device. The LDMOS transistor device 12 isformed in a second portion of the semiconductor layer 20 on an N-typeburied layer 28. The LDMOS transistor device 12 is formed in a deepN-well region 30. The LDMOS transistor device 12 includes a lateralchannel formed in a P-body region 34 under a gate electrode 42 andinsulated from the gate electrode by a gate dielectric layer. An N+region 36 and a P+ region 38 are formed in the P-body region 34 as thesource region and the body contact region, respectively. The drainregion is formed in an N+ region 36 that is formed spaced apart from thechannel area by an N-drift region 40. A dielectric layer 44 is formed onthe semiconductor layer 20 and openings in the dielectric layer 44 aremade to form contacts to the N+ and P+ diffusion regions. The source,drain and body terminals of the LDMOS transistor 12 are thus formed.

In the present embodiment, the N+ drain region of the LDMOS transistor12 is formed in an N-well 32. The use of the N-well at the drain regionof the LDMOS transistor 12 has the benefits of reducing the drainresistance of the transistor and optimizing the breakdown voltage.

In the fabrication process used to form the power integrated circuit 10,the P-body region 34 has an implant dose and an implant energy that areselected to obtain the desired threshold voltage and the desiredbreakdown voltage for the LDMOS transistor. When the same P-body region34 is used to form the gate region of the JFET device, the JFET devicecannot be optimized. For example, the P-body region may be too shallowso that the JFET device has a higher than desired pinch off voltage.

In embodiments of the present invention, a deep diffusion region 50,having the same conductivity type as the LDMOS body region, is formed inthe JFET device 11 and the LDMOS transistor 12 and positioned under theP-body region 34. In some embodiments, each deep diffusion region 50 isin electrical contact with the P-body region 34 to which it is situated.In other embodiments, the deep diffusion region 50 may be separated fromthe P-body region 34 and is left floating but connects to the P-bodyregion 34 through a depletion region that forms in the deep N-well 30between the deep diffusion region 50 and the P-body region 34. Thedepletion region between the deep diffusion region 50 and the P-bodyregion 34 may be formed from the inherent built in potential of thesemiconductor materials or formed by the reverse bias gate-to-sourcevoltage. In some embodiments, the deep diffusion region 50 is formedusing a single mask high energy implant process. Importantly, the samedeep diffusion region 50 is used to optimize both the JFET device 11 andthe LDMOS transistor 12. In particular, the deep diffusion region 50 isconfigured to optimize the pinch-off voltage of the JFET device 11 sothat a desired pinch-off voltage value is obtained. Furthermore, thesame deep diffusion region 50 forms a RESURF (reduced surface electricfield) structure in the LDMOS transistor, thereby forming a RESURFLDMOS, which improves the resistance Rds-A of the LDMOS and alsoimproves the device reliability.

In embodiments of the present invention, the deep diffusion region 50has the same conductivity type as the body region of the LDMOS bodyregion. Thus, the deep diffusion region 50 is a P-type diffusion region.Furthermore, the deep diffusion region 50 is more heavily doped than theP-body region 34. In some embodiment, the deep diffusion region 50 isformed using a single high energy implant process and has a uniformdoping profile. In other embodiments, the deep diffusion region 50 canbe formed using two or more high energy implant steps and the deepdiffusion region 50 has a graded doping profile. The doping dose andenergy are selected to tailor the pinch-off voltage of the JFET deviceand to improves the Rds-A of the LDMOS transistor.

In the present embodiment, the deep diffusion region 50 is formed usingtwo high energy implantation steps and a graded doping profile isformed. In some embodiments, the doping concentration decreasesgradually in a downward direction from the top surface of thesemiconductor layer. In one embodiment, the first implant step isperformed using 125% of the implant dose and 170% of the implant energyfor the P-body region; and the second implant step is performed using125% of the implant dose and 400% of the implant energy for the P-bodyregion. After annealing, the deep diffusion region 50 includes a moreheavily doped top layer and a more lightly doped but deeper bottomlayer.

At the JFET device 11, the deep diffusion region 50 forms a deeper gateregion, thereby forming a narrower channel in the deep N-well 30 andallowing the channel region to be pinched off at a lower pinch offvoltage. In this manner, the deep diffusion region 50 tailors the pinchoff voltage of the JFET device 11 to a desired voltage level for theapplication. For example, when the JFET device 11 is used as a start-upcircuit in the power integrated circuit to connect the power source todownstream circuit. The power source may be at a high voltage level(e.g. 12V) and the downstream circuit may require a lower circuitvoltage level (e.g. 5V). The JFET device 11 is tailored to have a pinchoff voltage around the lower circuit voltage level, such as between4-5V, so that the JFET device can be used effectively to protect thedownstream circuit.

In some embodiments, the deep diffusion region 50 in the JFET device hasa lateral dimension that is coincidence with the P-body region 34. Inother embodiments, the deep diffusion region 50 can extend beyond theP-body region. Furthermore, in some embodiments, the deep diffusionregion 50 is positioned spaced apart from the drain region of the JFETdevice, as shown in FIG. 2. In particular, the deep diffusion region 50may be positioned close to the N-well of the source region but ispositioned away from the N-well of the drain region. In someapplications, the drain of the JFET device may be connected to a highvoltage power source, such as 20V, while the source is connected to alow circuit voltage, such as 5V. Therefore, it is advantageous to havemore spacing between the drain region and the deep diffusion region 50to ensure a higher breakdown voltage. The source region is usuallyconnected to a lower circuit voltage and a lower breakdown voltage canbe sustained. Therefore, the spacing between the deep diffusion region50 and the N-well of the source region can be made smaller than thespacing between the deep diffusion region 50 to the N-well of the drainregion.

At the LDMOS transistor 12, the deep diffusion region 50 forms a RESURFstructure to spread the electric field at the drain region of the LDMOStransistor. In some embodiments, the deep diffusion region 50 providestwo dimensional electric field spreading so that the high electric fieldis pushed deeper into the semiconductor layer and away from the surface.In this manner, the reliability of the LDMOS transistor is improved.More specifically, the deep diffusion region 50 lowers the resistanceRds-A of the LDMOS transistor since the doping of the N-drift region 40can be made higher due to charge coupling from the deep diffusion region50. The reliability of the LDMOS transistor is improved as the electricfield is not concentrated at the surface of the device. In someembodiments, the deep diffusion region 50 in the LDMOS transistor devicehas a lateral dimension that is coincidence with the P-body region 34.In other embodiments, the deep diffusion region 50 can extend beyond theP-body region and reach closer to the N-drift region 40 for better fieldspreading.

FIG. 3 is a cross-sectional view of an LMOS transistor in a powerintegrated circuit according to embodiments of the present invention.FIG. 3 illustrates another embodiment of an LDMOS transistor which canbe integrated with the JFET device of FIG. 2 in the power integratedcircuit. Like elements in FIGS. 2 and 3 are given like referencenumerals and will not be further described. Referring to FIG. 3, theLDMOS 62 has a circular layout with the N+ source and P-body region 34being formed in the center and surrounded by the gate electrode 42 andthe N-drift region 40. In embodiments of the present invention, the deepdiffusion region 50 is formed under the P-body region 34 and alsoextends to under the N-drift region 40. Portions of the deep diffusionregion 50 under the N-drift region 40 are denoted as regions 52. Thedeep diffusion regions 52 are not as deep as the deep diffusion region50 because the implantation is performed through the thick field oxidelayer 54. The deep diffusion regions 52 extend the RESURF structure andfurther improve the reliability of the LDMOS transistor.

FIG. 3 illustrates an isolated LDMOS transistor formed on the N-typeburied layer 28. The isolated LDMOS transistor can be used in thehigh-side circuitry in the power integrated circuit. In otherembodiments, the LDMOS transistor of FIG. 3 can be constructed as anon-isolated LDMOS transistor by omitting the N-type buried layer. FIG.4 illustrates a non-isolated LDMOS transistor formed in the same manneras the LDMOS transistor of FIG. 3 with the N-type buried layer omitted.The non-isolated LDMOS transistor 72 of FIG. 4 includes the deepdiffusion region 50 with portions 52 extending under the N-drift region40.

In some embodiments, the following fabrication process sequence can beused to fabricate the power integrated circuit 10 of FIG. 2. First, ap-type substrate is provided. Then, the buried layers are formed. Insome cases, the N-type buried layer is formed selectively and the P-typeburied layer is formed everywhere N-type buried layer is absent. Then,the epitaxial layer is grown. The deep N-well and the N-well are thenformed. Field oxide is grown to define active area of the powerintegrated circuit. Then, the P-body region is formed. At this point,the deep diffusion region is then formed by using a high energy implantprocess through the P-body region and the field oxide layer, ifapplicable. The remaining processing steps includes gate oxidation toform the gate oxide, forming the gate electrode and forming the N+ andP+ diffusion regions.

In alternate embodiments of the present invention, the deep diffusionregion can be formed using a multiple epitaxial layer process instead ofhigh energy implantation. Thus, the epitaxial layer is formed to a firstthickness and then an implantation step is performed to form the deepdiffusion region. Then, the remaining portion of the epitaxial layer maybe formed. In this manner, the deep diffusion region is formed buried inthe epitaxial at a depth deeper than the P-body region to be formed. Inother embodiments, multiple epitaxial and implantation process can beperformed to form a graded doping profile at the deep diffusion region.

In the above description, the JFET device and the LDMOS transistordevice are both N-type devices. One of ordinary skill in the art wouldappreciate that P-type JFET device and P-type LDMOS transistor can beformed using semiconductor material and diffusion regions of theopposite polarity types.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, the invention is not limitedto the details provided. There are many alternative ways of implementingthe invention. The disclosed embodiments are illustrative and notrestrictive.

What is claimed is:
 1. A power integrated circuit, comprising: asemiconductor layer of a first conductivity type and being lightlydoped; a junction field effect transistor (JFET) device formed in afirst portion of the semiconductor layer and being formed in a firstdeep well of a second conductivity type, the JFET device including agate region formed using a first body region of the first conductivitytype, source and drain regions of the second conductivity type formed onopposite sides of the gate region, a channel of the JFET device beingformed in an area of the first deep well between the source region andthe drain region outside of the gate region; a double-diffusedmetal-oxide-semiconductor (LDMOS) transistor formed in a second portionof the semiconductor layer and being formed in a second deep well of thesecond conductivity type, the LDMOS transistor including a second bodyregion of the first conductivity type formed in the second deep well, agate electrode, a source region, and a drain drift region in electricalcontact with a drain region, a channel of the LDMOS transistor beingformed in the second body region between the source region and the draindrift region, wherein the second body region is formed to optimize athreshold voltage and a breakdown voltage of the LDMOS transistor andthe first and second body regions have the same doping concentration anddepth; a first deep diffusion region formed in the first deep well underthe first body region and in electrical contact with the first bodyregion, the first deep diffusion region together with the first bodyregion establishing a pinch off voltage of the JFET device; and a seconddeep diffusion region formed in the second deep well under the secondbody region and in electrical contact with the second body region, thesecond deep diffusion region forming a reduced surface field (RESURF)structure in the LDMOS transistor.
 2. The power integrated circuit ofclaim 1, wherein the LDMOS transistor further comprises: the gateelectrode being formed partially overlapping the body region andinsulated from the semiconductor body by a gate dielectric layer; thesource region of the second conductivity type being formed in the secondbody region on a first side of the gate electrode; and the drain driftregion of the first conductivity type being formed in the second deepwell; and a drain region being formed in the drain drift region, thedrain region comprising a first well of the second conductivity type. 3.The power integrated circuit of claim 1, wherein the semiconductor layercomprises: a semiconductor substrate of the first conductivity type; andan epitaxial layer of the first conductivity type formed on thesemiconductor substrate.
 4. The power integrated circuit of claim 1,wherein the first and second body regions are formed using the sameprocessing steps including using the same implant dose and the sameimplant energy, the implant dose and the implant energy being selectedto optimize a threshold voltage and a breakdown voltage of the LDMOStransistor.
 5. The power integrated circuit of claim 1, wherein thefirst and second deep diffusion regions are formed using the sameprocessing steps and have the same doping concentration and depth, thefirst and second deep diffusion regions being more heavily doped thanthe first and second body regions.
 6. The power integrated circuit ofclaim 5, wherein the first and second deep diffusion regions have agraded doping profile, the doping concentration decreasing from a firstedge of the first or second deep diffusion region near the respectivebody region to a second edge away from the respective body region. 7.The power integrated circuit of claim 1, wherein the first deepdiffusion region has a width that is coincidence with the first bodyregion or extends beyond the first body region on both sides of thefirst body region.
 8. The power integrated circuit of claim 7, whereinthe first deep diffusion region is spaced apart from the drain region bya first distance and is spaced apart from the source region by a seconddistance, the first distance being greater than the second distance. 9.The power integrated circuit of claim 1, wherein the second deepdiffusion region has a width that is coincidence with the second bodyregion or extends beyond the second body region towards the drain driftregion or extends under the drain drift region.
 10. The power integratedcircuit of claim 1, wherein the first conductivity type is P-type andthe second conductivity type is N-type.
 11. The power integrated circuitof claim 3, further comprising: a first buried layer of the firstconductivity type formed in the first portion of the semiconductor layerbetween the epitaxial layer and the semiconductor substrate; and asecond buried layer of the second conductivity type formed in the secondportion of the semiconductor layer between the epitaxial layer and thesemiconductor substrate.
 12. A method for forming a power integratedcircuit, comprising: providing a semiconductor layer of a firstconductivity type and being lightly doped; forming a first deep well ofa second conductivity type in a first portion of the semiconductorlayer; forming a second deep well of the second conductivity type in asecond portion of the semiconductor layer; forming a first body regionof the first conductivity type in the first deep well, the first bodyregion being a gate region of a junction field effect transistor (JFET)device; forming a second body region of the first conductivity type inthe second deep well, the second body region forming a channel of adouble-diffused metal-oxide-semiconductor (LDMOS) transistor, whereinthe second body region is formed to optimize a threshold voltage and abreakdown voltage of the LDMOS transistor and the first and second bodyregions have the same doping concentration and depth; forming a firstdeep diffusion region in the first deep well under the first body regionand in electrical contact with the first body region, the first deepdiffusion region together with the first body region establishing apinch off voltage of the JFET device; and forming a second deepdiffusion region in the second deep well under the second body regionand in electrical contact with the second body region, the second deepdiffusion region forming a reduced surface field (RESURF) structure inthe LDMOS transistor.
 13. The method of claim 12, further comprising:forming source and drain regions of the second conductivity type onopposite sides of the gate region in the first portion of thesemiconductor layer, a channel of the JFET device being formed in anarea of the first deep well between the source region and the drainregion outside of the gate region.
 14. The method of claim 12, furthercomprising: forming a gate electrode, a source region, a drain driftregion and a drain region in the second portion of the semiconductorlayer, a channel of the LDMOS transistor being formed in the second bodyregion between the source region and the drain drift region, the drainregion comprising a first well of the second conductivity type.
 15. Themethod of claim 12, wherein forming the first body region and formingthe second body region comprises: forming the first body region and thesecond body region using the same processing steps including the sameimplant dose and the same implant energy, the implant dose and theimplant energy being selected to optimize a threshold voltage and abreakdown voltage of the LDMOS transistor.
 16. The method of claim 12,wherein forming the first deep diffusion region and forming the seconddeep diffusion region comprises: forming the first and second deepdiffusion regions using the same processing steps and have the samedoping concentration and depth, the first and second deep diffusionregions being more heavily doped than the first and second body regions.17. The method of claim 16, wherein forming the first deep diffusionregion and forming the second deep diffusion region comprises: formingthe first and second deep diffusion regions to have a graded dopingprofile, the doping concentration decreasing from a first edge near therespective body region to a second edge away from the respective bodyregion.
 18. The method of claim 17, wherein forming the first and seconddeep diffusion regions to have a graded doping profile comprises:performing a first ion implantation of dopants of the first conductivitytype through a first mask defining the first and second deep diffusionregions and using a first implant dose and a first implant energy; andperforming a second ion implantation of dopants of the firstconductivity type through the first mask and using a second implant doseand a second implant energy, the second implant energy greater than thefirst implant energy.
 19. The method of claim 12, wherein forming thefirst deep diffusion region comprises: forming the first deep diffusionregion to have a width that is coincidence with the first body region orextends beyond the first body region on both sides of the first bodyregion.
 20. The method of claim 19, wherein forming the first deepdiffusion region comprises: forming the first deep diffusion region thatis spaced apart from the drain region by a first distance and is spacedapart from the source region by a second distance, the first distancebeing greater than the second distance.
 21. The method of claim 12,wherein forming the second deep diffusion region comprises: forming thesecond deep diffusion region to have a width that is coincidence withthe second body region or extends beyond the second body region towardsthe drain drift region or extends under the drain drift region.
 22. Themethod of claim 12, wherein the first conductivity type is P-type andthe second conductivity type is N-type.